(Sr.) Technology Development Engineer - GaN (m/f/d)

Nexperia · Hamburg, Deutschland · Vor Ort · 23. Juni 2026

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Veröffentlicht 23. Juni 2026 · Gefunden auf Nexperia
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About the role

As (Sr.) Technology Development Engineer (m/f/d), you will join our talented and ambitious R&D team, directly contributing to our ability to successfully produce Gallium Nitride (GaN) devices.

Why work for us?

  • Flexible working hours and possibility of overtime reduction to maintain a Work-Life-Balance
  • Unlimited employment contract with a competitive salary and supplementary voluntary employee benefits
  • A wide variety of training courses and career development options
  • Numerous further benefits, such as retirement provisions, travel allowance for the public transport ticket, company events, sports and leisure activities, employee discounts and even more

Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark.

D&I Statement

As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested.

In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management positions to 30% by 2030.

This is your new job

  • Lead the development of GaN process modules (etch, deposition, metallization, passivation..etc) to improve device performance.
  • Collaborate with fab engineers to ensure the manufacturability, stability and scalability of the new technologies.
  • Collaborate with design and device engineers to translate concepts into process flows.
  • Explore new material, process chemistry and integration schemes to push performance, reliability and manufacturability.
  • Conduct DOE experiments, analyze results, and identify optimal process conditions

This is you

  • Masters, or Ph.D. degree or equivalent experience in Electrical Engineering or Solid-State Physics with specific Know-how and hands-on experience in semiconductor process and characterization, especially for GaN Technology
  • Strong background in GaN or III-V semiconductor process technology
  • Hands-on experience with semiconductor fabrication process in clean-room.
  • Strong skills in data analysis and statistical tools.
  • Previous experience in semiconductor industry is preferred.
  • Team player with strong problem-solving skills and a continuous improvement mindset
  • Good communication skills in English (both spoken and written), German a plus

This is your team

Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions.

Arbeitgeber
Nexperia
Ort
Hamburg, Deutschland · Vor Ort